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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices
Darlington Complementary Silicon Power Transistors
Designed for general-purpose amplifier and low frequency switching applications.
Features http://onsemi.com
* High DC Current Gain - *
Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V Collector-Emitter Sustaining Voltage - @ 30 mA VCEO(sus) = 60 Vdc (Min) - TIP140, TIP145 = 80 Vdc (Min) - TIP141, TIP146 = 100 Vdc (Min) - TIP142, TIP147 Monolithic Construction with Built-In Base-Emitter Shunt Resistor Pb-Free Packages are Available*
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS, 125 WATTS
* *
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC 10 15 IB PD TJ, Tstg 0.5 125 -65 to +150 Adc W _C TIP140 TIP145 60 60 TIP141 TIP146 80 80 5.0 TIP142 TIP147 100 100 Unit Vdc Vdc Vdc Adc
SOT-93 (TO-218) CASE 340D STYLE 1
MARKING DIAGRAM
AYWWG TIP14x
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA Max 1.0 35.7 Unit C/W C/W A Y WW TIP14x x G = Assembly Location = Year = Work Week = Device Code = 0, 1, 2, 5, 6, or 7 = Pb-Free Package
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. 5 ms, v 10% Duty Cycle.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
Preferred devices are recommended choices for future use and best overall value.
1
September, 2005 - Rev. 5
Publication Order Number: TIP140/D
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
DARLINGTON SCHEMATICS
NPN TIP140 TIP141 TIP142 BASE
COLLECTOR
PNP TIP145 TIP146 TIP147 BASE
COLLECTOR
8.0 k
40
8.0 k
40
EMITTER
EMITTER
ORDERING INFORMATION
Device TIP140 TIP140G TIP141 TIP141G TIP142 TIP142G TIP145 TIP145G TIP146 TIP146G TIP147 TIP147G Package SOT-93 (TO-218) SOT-93 (TO-218) (Pb-Free) SOT-93 (TO-218) SOT-93 (TO-218) (Pb-Free) SOT-93 (TO-218) SOT-93 (TO-218) (Pb-Free) SOT-93 (TO-218) SOT-93 (TO-218) (Pb-Free) SOT-93 (TO-218) SOT-93 (TO-218) (Pb-Free) SOT-93 (TO-218) SOT-93 (TO-218) (Pb-Free) Shipping 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail
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2
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
t, TIME ( s)
III I I I I II IIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIII IIIIII IIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I I II I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I II I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mA, IB = 0) VCEO(sus) Vdc TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 60 80 100 - - - - - - Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0) ICEO mA TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 - - - - - - 2.0 2.0 2.0 ICBO mA TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 - - - - - - - - 1.0 1.0 1.0 Emitter Cutoff Current (VBE = 5.0 V) IEBO 20 mA ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 5.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) hFE - 1000 500 - - - - - - - - - - - - Collector-Emitter Saturation Voltage (IC = 5.0 A, IB = 10 mA) (IC = 10 A, IB = 40 mA) Base-Emitter Saturation Voltage (IC = 10 A, IB = 40 mA) Base-Emitter On Voltage (IC = 10 A, VCE = 4.0 Vdc) VCE(sat) Vdc 2.0 3.0 3.5 3.0 VBE(sat) VBE(on) Vdc Vdc SWITCHING CHARACTERISTICS Resistive Load (See Figure 1) Delay Time Rise Time td tr - - - - 0.15 0.55 2.5 2.5 - - - - ms ms ms ms Storage Time Fall Time (VCC = 30 V, IC = 5.0 A, IB = 20 mA, Duty Cycle v 2.0%, IB1 = IB2, RC & RB Varied, TJ = 25_C) ts tf 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. 10 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC SCOPE MSD6100 USED BELOW IB 100 mA
TUT V2 approx +12 V 0 V1 appox. -8.0 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 +4.0 V 25 ms
for td and tr, D1 is disconnected and V2 = 0
VCC
5.0 ts 2.0 tf 1.0 0.5 tr td @ VBE(off) = 0 0.2 0.1 0.2
PNP NPN
8.0 k
40
VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 10 20
0.5
For NPN test circuit reverse diode and voltage polarities.
1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP)
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
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3
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
TYPICAL CHARACTERISTICS
NPN TIP140, TIP141, TIP142
20,000 5000 hFE , DC CURRENT GAIN TJ = 150C hFE , DC CURRENT GAIN 100C 25C -55 C 1000 10,000 7000 5000 3000 2000 VCE = 4.0 V 7.0 10 1000 0.5 0.7 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 10 -55 C TJ = 150C 100C 25C
PNP TIP145, TIP146, TIP147
2000
500 300 0.5
VCE = 4.0 V 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS)
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
5.0
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
Figure 3. DC Current Gain versus Collector Current
5.0
3.0 2.0
3.0 2.0 IC = 10 A, IB = 4.0 mA
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 -75 -50 -25 0 25 50 75 100 125 150 175
IC = 5.0 A, IB = 10 mA 1.0 0.7 0.5 -75 -50 -25 0 25 50 75 IC = 1.0 A, IB = 2.0 mA
100
125
150
175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 4. Collector-Emitter Saturation Voltage
VBE, BASE-EMITTER VOLTAGE (VOLTS)
3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 -75 -25 25 75
VBE, BASE-EMITTER VOLTAGE (VOLTS)
4.0 VCE = 4.0 V
4.0 3.6 3.2 2.8 2.4 IC = 10 A 2.0 1.6 1.2 0.8 -75 -25 25 75 125 5.0 A 1.0 A 175 VCE = 4.0 V
IC = 10 A 5.0 A 1.0 A 125 175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Base-Emitter Voltage
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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
ACTIVE-REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
20 IC, COLLECTOR CURRENT (AMP) (mA) 10 7.0 5.0 3.0 2.0 1.0 dc TJ = 150C SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25C TIP140, 145 TIP141, 146 TIP142, 147 15 20 70 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) 15 10 7.0 5.0 100 mJ
2.0
0.2 10
1.0 100 0.5 1.0 2.0 5.0 10 20 L, UNCLAMPED INDUCTIVE LOAD (mH) 50 100
Figure 6. Active-Region Safe Operating Area
Figure 7. Unclamped Inductive Load
VCE MONITOR MPS-U52 RBB1 INPUT 50 50 1.5 k RBB2 = 100 VBB2 = 0 VBB1 = 10 V 100 mH TUT VCC = 20 V IC MONITOR RS = 0.1
INPUT VOLTAGE COLLECTOR CURRENT 1.42 A VCE(sat) -20 V COLLECTOR VOLTAGE V(BR)CER
w 7.0 ms (SEE NOTE 1) 5.0 V 0 100 ms 0
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A. NOTE 2: For NPN test circuit reverse polarities.
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
hfe , SMALL-SIGNAL FORWARD CURRENT TRANSFER RATIO 100 70 50 PNP 20 10 7.0 5.0 NPN PNP NPN VCE = 10 V IC = 1.0 A TJ = 25C
2.0 1.0 1.0
2.0
3.0 5.0 f, FREQUENCY (MHz)
7.0
10
Figure 9. Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio
5.0 PD, POWER DISSIPATION (WATTS)
4.0
3.0
2.0
1.0 0 0 40 80 120 160 TA, FREE-AIR TEMPERATURE (C) 200
Figure 10. Free-Air Temperature Power Derating
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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
PACKAGE DIMENSIONS
SOT-93 (TO-218) CASE 340D-02 ISSUE E
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069
U S K L
1 2
4
A
3
D V G
J H
DIM A B C D E G H J K L Q S U V
STYLE 1: PIN 1. 2. 3. 4.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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TIP140/D

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